Abstract
A Diode-Clamped Carrier Stored Trench Insulated Gate Bipolar Transistor (DC-CS-TIGBT) is proposed. Two series-connected diodes are implemented on the surface of the DC-CS-TIGBT to clamp the voltage potential of the buried P layer under the trench gate. Thus, the buried P layer forms an electric field shielding structure for the Carrier Stored (CS) layer. The voltage potential of the CS layer is shielded at a low value which contributes to improving the doping concentration of the CS layer up to $1\times 10^{19}$ cm−3. Consequently, the trade-off between on-state voltage drop $(V_{\mathrm{o}\mathrm{n}})$ and turning-off loss $(E_{\mathrm{o}\mathrm{f}\mathrm{f}})$ is significantly improved and the saturation current density is reduced by 55%, which indicates an enlarged Short-Circuit Safe Operation Area (SCSOA).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
