Abstract
In this letter, we propose a new trench-gate power MOSFET with buried oxide in its drift region that shows an improvement in the breakdown performance as compared to the conventional trench device due to a reduction in the vertical electric field. In addition, the proposed device shows about linear relation between the BV and <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> as compared to the 2.5th power relation in the conventional device.
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