Abstract
Abstract Laser assisted chemical vapor deposition (LCVD) is a new approach for the integration of optoelectronic devices. Device quality GaAs has been selectively grown in a temperature range of 300–400°C. LCVD films were doped both n- and p-type using H 2 Se and DMZn, respectively. Planar doping with sheet carrier concentrations ranging from 10 12 -10 13 cm -2 and a C-V profile with FWHM of 30Awas achieved. This sharp doping profile, one of the narrowest reported, is a result of the low temperature deposition offered by the LCVD technique. We also report for the first time the direct and selective fabrication of a PIN detector with an external quantum efficiency of 60% (without AR coating) and cutoff frequency of 2 GHz.
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