Abstract
A new analytical model for the surface field distribution and optimization of thin film silicon-on-insulator (TFSOI) reduced surface field (RESURF) devices has been proposed. The analytical expressions for the surface potential and field distribution are derived on the basis of the two-dimensional Poisson equation. From this analysis, the optimum design condition for the maximum breakdown voltage is obtained. The dependence of the maximum breakdown voltage on the drift region length is examined and the relationship between the critical doping concentration and the front and back interface oxide layer thickness is discussed. A numerical simulation, performed by DESSIS-ISE, has been shown to support the analytical results.
Published Version
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