Abstract
This brief presents a double complimentary metal–oxide–semiconductor (MOS) parametric integrator (DCMPI) with improved linearity characteristics for wideband switched-capacitor sigma-delta ( $\Sigma\Delta$ ) modulators. Compared with the MOS parametric integrator [1] , the proposed circuit achieves similar power, noise, and speed performance, while its linearity characteristics and transfer function are improved. The main nonideality improvements in the proposed DCMPI are presented through the mathematical formulas and verified through the postlayout simulations performed in the Spectre/Cadence electrical simulator using the BSIM3v3 complementary MOS (CMOS) model in the standard 0.18- $\mu\hbox{m}$ CMOS process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Circuits and Systems II: Express Briefs
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
