Abstract
A monolithic Ka-band transmitter using 0.25 mu m GaAs MESFET technology has been developed. This MMIC chip consists of a VCO and a power amplifier. An output power of 21.5 dBm with a tuning range of 600 MHz centered at 35.8 GHz has been achieved. The average RF yield of this transmitter chip, using the specifications of 17 dBm output power and 400 MHz tuning range, is as high as 40%. The high yield number obtained from this high level integration MMIC of multifunctional chips indicates the maturity of the quarter micron GaAs MESFET technology. >
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