Abstract
A monolithic integration scheme for GaN-based power converter integrated circuit is proposed in this paper, wherein the scheme is based on a novel versatile HEMT architecture featuring full-Schottky contacts. By simply introducing only one type of device for building both field effect transistors and diodes, the power converter ICs could be realized in a compact way. In addition, this scheme avoids harmful high temperature process which is for forming ohmic contacts in some nitride semiconductors. In this sense, this scheme could significantly reduce the complexity of the integration, and therefore, promisingly enable higher device performance.
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