Abstract
The degradation of a metal-nitride-oxide-semiconductor (MNOS) structure has been investigated using p-channel MNOS transistors with a relatively thick oxide layer. Significant degradation effects, e.g., a negative shift of the threshold voltage Vth or the flatband voltage VFB, an increase in the density of the SiO2-Si interface states, a deformation of the memory hysteresis curve, and increase in hole conduction in the oxide are observed during positive-bias stress to the gate. Based on these experimental results, a model of degradation mechanisms in the MNOS structure, where hole conduction in the oxide results in the degradation, is proposed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
