Abstract
The performance and use of a unique metal nitride oxide semiconductor (MNOS) nonvolatile random access memory (RAM) designed and fabricated by the Sperry Univac Semiconductor Facility in St. Paul, MN, are presented. Chip operation and characteristics are described which make this device, called the SU110, suitable for a broad range of applications over a range of write times, retention times, and temperature. An example is given of a 2K word by 8-bit nonvolatile semiconductor memory system building block using the SU110.
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