Abstract
Abstract To characterize the effective fracture energy G IC of polysilicon wafers at room temperature, an on-chip MEMS test structure has been designed and fabricated. The device can provide fatigue pre-cracking at the notch apex and subsequently impose a monotonical load up to failure. The proposed procedure combines the experimental data with outcomes of numerical simulations. A continuously monitored decrease in stiffness of the system is linked to the crack length and the effective fracture energy for the non-standard geometry of the testing device. An average value of G IC = 12.0 ± 1.8 N m −1 is found. These values are then used in numerical micro-scale fracture analyses taking into account the material heterogeneity due to the grain structure and reproducing the crack propagation process with a cohesive approach.
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