Abstract
In this work, a fabrication process of high crystallinity CZTSSe absorber layer is presented. The CZTS structure is firstly prepared by spin-coating method then the film is converted into CZTSSe via selenization process using graphite box and tube furnace. Se powder has been used as source of selenizing vapors. By keeping the annealing temperature as constant and changing the mass of Se powder, the structural, optical, electrical properties, and composition of CZTSSe thin films are investigated. With substitution of S by Se, the smoothly, densely packed morphology and large grain size have been achieved. At optimal Se mass, the p-type CZTSSe film has bandgap energy, hole concentration, and resistivity of 1.27 eV, 1.7 × 1019cm−3 and 0.57 Ω.cm respectively which are suitable for photovoltaic application.
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