Abstract
Realizing large-scale circuits utilizing emerging nanoionic devices known as memristors depends on the accurate modeling of their behavior under a wide range of biasing conditions. Currently, no available SPICE memristor model accounts for both nonvolatile and volatile resistive switching characteristics, the coexistence of which has been recently demonstrated to manifest on practical ReRAM. In this letter, we present a new memristor SPICE model that introduces volatile effects, which can render a rate-dependent bipolar nonvolatile switching operation. The model is demonstrated via a number of simulation cases and is benchmarked against measured results acquired by solid-state TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ReRAM.
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