A measurement of intrinsic SiO2 film stress resulting from low temperature thermal oxidation of Si

Abstract

A parallel beam reflection technique has been developed in our laboratory for measuring intrinsic residual stress for Si wafers thermally oxidized at temperatures of 600–1150 °C. A detailed description of this technique is provided, and stress values calculated for thermally grown SiO2 films on Si are consistent with those reported in the literature. Low temperature thermal oxidations resulted in compressive intrinsic SiO2 stresses greater than 4×109 dyn/cm2.