Abstract
A technique for the rapid evaluation of the optical performance of wafers grown for fabricating visible-light-emitting diodes (LEDs) is presented. The technique is simple, non-destructive and can be used to qualify wafers prior to the relatively expensive device-processing stage. The technique resolves the problem resulting from the lack of correlation between photoluminescence measurements on as-grown materials and electroluminescence on the final structures. The lack of such correlation has been a pertinent problem for the material growth industry. The materials used for this investigation are those grown specifically for the fabrication of high-performance LEDs.
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