Abstract
This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO2 interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e−rms, low dark current density of 56 pA/cm2 at −35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV.
Highlights
X-ray astronomical satellites require low-noise high-time-resolution high-spatial-resolution detectors
The with the help of lateral electro-static field but without touching to the Si surface. The rest of this rest of this paper describes the pixel device structure, pixel circuits, implementation and evaluation paper describes the pixel device structure, pixel circuits, implementation and evaluation results of the results of the silicon-on-insulator pixel (SOIPIX)-pinned depleted diode diode detector (PDD), and conclusions
A buried n-well (BNW) formed under the buried p-well (BPW) is depleted and this layer acts as a burieda buried to carriers gather carriers generated in theinto pixel the sensing node and to improve channelchannel to gather generated in the pixel theinto sensing node (n+)
Summary
X-ray astronomical satellites require low-noise high-time-resolution high-spatial-resolution detectors. The silicon-on-insulator pixel (SOIPIX) detector technology being developed by the High Energy size can be Research relativelyOrganization small for higher spatial resolution. SOIPIXs associated associated technology with the readout noise, dark current, crosstalk, and charge collection efficiency, while with the readout noise, dark current, crosstalk, and charge collection efficiency, while having having a featurea feature of fully depleted thick sensing region of the handle substrate which is commonly of fully depleted thick sensing region of the handle substrate which is commonly required required for high for highimaging energy[12,13,14]. Sensors 2018, 18, 27 charge collection efficiency and high-speed response because the signal carriers collected run in the buried channel with the help of lateral electro-static field but without touching to the Si surface.
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