Abstract
A fully integrated CMOS active probe for characterizing conducted electromagnetic interference (EMI) in the gigahertz range is presented. Based on the direct coupling method of International Electrotechnical Commission standard, the active 1- $\Omega $ current probe is designed and realized by a standard 0.18- $\mu \text{m}$ CMOS technology to overcome a large insertion loss of 34.2 dB in the conventional passive probe. A high-precision on-chip 1- $\Omega $ resistance is implemented at the input, followed by a high gain and wideband amplifier in the proposed EMI probe. The measured insertion loss is significantly reduced to $\sim 18$ dB with a bandwidth up to 3 GHz. Also, the conducted emission of a microcontroller unit is tested, which demonstrates that the proposed active probe could capture very low-level high-frequency interference overlooked by the conventional passive probe.
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