A Low Gate Turn-OFF Impedance Driver for Suppressing Crosstalk of SiC MOSFET Based on Different Discrete Packages

Abstract

Because of higher switching speed of silicon carbide MOSFET, the crosstalk in a phase-leg configuration will be more serious, which hinders the increase of switching frequency and lowers the reliability of the power electronic equipment. The displacement current of the gate–drain capacitor and the voltage drop on the common-source inductors can induce the crosstalk. In order to suppress the crosstalk, this paper proposes a novel gate driver, in which two additional capacitors are added to create the low turn-off gate impedance. With this proposed driver, the common-source parasitic inductor can be decoupled from the gate loop and the displacement current of the gate–drain capacitor can be bypassed. In addition, the operating principle and the parameters design are also analyzed. Finally, the crosstalk in the non-Kelvin package and the Kelvin package are tested by experiments, the validity of the analysis and the effectiveness for suppression the crosstalk are proved as well.