Abstract
A ladder-type organosilicate copolymer based on trimethoxymethylsilane (MTMS) and 1,2-bis(triethoxysilyl)alkane (BTESn: n = 2–4) were synthesized for use as gate dielectrics in organic thin-film transistors (OTFTs). For the BTESn, the number of carbon chains (2–4) was varied to elucidate the relationship between the chemical structure of the monomer and the resulting dielectric properties. The developed copolymer films require a low curing temperature (≈150 °C) and exhibit good insulating properties (leakage current density of ≈10−8–10−7 A·cm−2 at 1 MV·cm−1). Copolymer films were employed as dielectric materials for use in top-contact/bottom-gate organic thin-film transistors and the resulting devices exhibited decent electrical performance for both p- and n-channel organic semiconductors with mobility as high as 0.15 cm2·V−1·s−1 and an Ion/Ioff of >105. Furthermore, dielectric films were used for the fabrication of TFTs on flexible substrates.
Highlights
Organic thin-film transistors (OTFTs) have been an important research subject because they are indispensable elements in the development of low-cost, large-area electronics, such as paper-based displays, smart cards, radio-frequency ID tags, and sensors [1,2,3,4,5,6,7,8]
Development of new dielectric materials for OTFTs, which perform as capacitors, insulators, and substrates, is important to realize various electronic applications based on OTFTs
The OTFTs employing copolymer dielectrics were fabricated, and the resulting devices were active for both p- and n-channel organic semiconductors with carrier mobility as high as 0.15 cm2 V−1 ·s−1 and a current on/off ratio of
Summary
Organic thin-film transistors (OTFTs) have been an important research subject because they are indispensable elements in the development of low-cost, large-area electronics, such as paper-based displays, smart cards, radio-frequency ID tags, and sensors [1,2,3,4,5,6,7,8]. Development of new dielectric materials for OTFTs, which perform as capacitors, insulators, and substrates, is important to realize various electronic applications based on OTFTs. Favorable dielectric characteristics of OTFT-based electronic devices include ease of preparation, low cost, large area processibility, as well as excellent insulating properties [19,20,21,22,23]. Favorable dielectric characteristics of OTFT-based electronic devices include ease of preparation, low cost, large area processibility, as well as excellent insulating properties [19,20,21,22,23] Inorganic materials, such as SiO2 , Al2 O3 , and TiO2 , have traditionally been employed as dielectrics for OTFTs due to their excellent insulating properties. Some organic-based dielectrics can be readily processed at low temperature, which can be employed on flexible substrates, such as polyethylene terephthalate (PET)
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