Abstract
In order to obtain detailed information about the kinetics and the reaction nature of a complex reaction process like reaction bonding of silicon nitride, mathematical modelling of the process is necessary. The previous quantitative models for this process haw been based only on the mechanism that the nitrogen diffuses through the solid silicon nitride without taking into account the multiple reaction mechanisms. In the present study, a comprehensive kinetic model, which is based on analysis of the multiple mechanisms in a silicon powder compact reacting with nitrogen gas and forming silicon nitride, is constructed for a solid-gas reaction bonding process with specific application to the reactionbonding of silicon nitride. The model will incorporate the rate equation for each mechanism into a constitutive equation from which more complete information of process kinetics can be predicted. The results predicted by the present model have been compared with previous experimental results and satisfactory agreement obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
