Abstract

The authors present a framework for modeling anomalous diffusion during postimplant rapid thermal annealing. The model combines a detailed Monte Carlo calculation of the buildup of damage to the silicon substrate during the implant with a new kinetic model for impurity and defect diffusion. The formulation also predicts the experimentally observed decay of the anomalous diffusion. The model shows good agreement with experimental data for transient diffusion of phosphorus and boron. >

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