Abstract

A Ka-band power amplifier (PA) in a differential cascode topology with active biasing is designed, implemented in a 0.25 μm SiGe BiCMOS technology, and characterized. The design presents low power consumption and high Power Added Efficiency (PAE). This PA presents an output power of 12.3 dBm at P1dB with 16.5% Power Added Efficiency (PAE). The PAE peak is 17.5 % and it is centered nearby the P1dB. The consumed power is lower than 100 mW at the P1dB with a supply voltage of 3.3 V. Including the measurements pads the IC occupies an area of 870 μm × 780 μm.

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