Abstract
Temperature-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> ) extraction and prediction of power semiconductor devices. In this paper, the turn-off loss (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ) and turn-off time (t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ) are presented as temperature-sensitive electrical parameters. The abrupt change in the junction temperature of Insulated Gate Bipolar Transistor (IGBT) occurs during switching is proved. Common deficiencies in a single temperature-sensitive electrical parameter were considered, including the necessity of the collector currents exaction, the poor junction detection accuracy. Therefore, after the linear relationship between junction temperature and turn-off time, and turn-off loss is proved, a hybrid model based on turn-off loss (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ) and turn-off time (t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ) is proposed to extract junction temperature accurately. The experimental results show that the proposed method is with the advantages of high accuracy and strong anti-interference ability. Although some high-precision probes are required for parameter extraction, it indicates the internal mechanism of junction temperature mutation of the power device, and it is of great value for the reliability of the power devices that operate continuously.
Highlights
Insulated Gate Bipolar Transistor (IGBT) modules are at the core of many power electronic systems
It can be seen that the fitting accuracy of the IGBT junction temperature prediction model based on the hybrid model of turn-off loss and turn-off time can be improved by 2% to 9% compared with the single model, which proves that the junction temperature prediction method based on hybrid parameters have the effect that improves the accuracy
It can be found that the hybrid model of turn-off loss and turn-off delay time for junction temperature detection (Fig. 16) is more sensitive than the junction temperature detection method based on a single temperature-sensitive electrical parameter (9% higher)
Summary
Insulated Gate Bipolar Transistor (IGBT) modules are at the core of many power electronic systems. With the increase of junction temperature, the gap width of the silicon chip will decrease At this time, carriers are more likely to be excited to open the gate electrode, resulting in the deviation of gate-emitter voltage, and the Miller platform will change . The above parameters, including gate resistance Rg and Miller platform Vgp/tgp, have a certain linear relationship with the junction temperature of IGBT. CHARACTERISTICS OF THE RELEVANT PARAMETERS IN THE TURN-OFF PROCESS the specifics of IGBT modules are demonstrated, including the change of junction temperature under working conditions and internal structure. Stage 2nd [t1∼t2]: Tthe gate voltage is clamped on the Miller platform, VGE = Vgp. While the resistancetype drive circuit is used, the gate current maintains a constant output value. The charge in the input capacitor Cies is gradually withdrawn, and the gate voltage VGE is out of the Miller platform, and the VGE drops rapidly
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