Abstract
With the popularity of 5G technique, large bandwidth devices are urgently needed to meet the enormous transmission requirements. Recently, the shear horizontal (SH) surface acoustic wave (SAW) resonators with large effective coefficient (k<sup>2</sup> <inf>eff</inf>) attracted wide attention, however, obtaining a high quality-factor (Q) is still a great challenge due to the bulk acoustic wave radiation into the substrate. In this work, a 30° YX-LiNbO<inf>3</inf>/SiO<inf>2</inf>/Si Non-leaky Stack SAW (NS-SAW) resonator with SH mode is proposed. Large velocity difference between the SHSAW wave in LiNbO<inf>3</inf> layer and the slow shear bulk acoustic wave in SiO<inf>2</inf>/Si substrate helps to reduce the bulk wave leakage. Numerical simulations by finite element method (FEM) are implemented to optimize the cut angle of LiNbO<inf>3</inf> film and the thickness of each layer. The fabricated NS-SAW resonators yield a k<sup>2</sup> <inf>eff</inf> of 24.4% and a Bode-Q<inf>max</inf> of 1092. Compared to the reported similar-type SAW resonators, the NS-SAW resonator shows the best level of figure of merit (FoM=266) when k<sup>2</sup> <inf>eff</inf> is more than 20%, presenting great potential for designing the wide bandwidth devices in 5G wireless communication.
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