Abstract
In this paper, a high-efficiency 4.35-4.85 GHz Doherty power amplifier based on high-power GaN HEMT devices with internal input matching for base station applications is proposed and described. For a two-way compact Doherty structure using two internally matched 30-W GaN HEMT transistor dies in a single plastic package with asymmetric loading for the carrier and peaking amplifiers, the peak output power of greater than 47 dBm at 2-dB gain compression point, peak drain efficiency of greater than 60%, and drain efficiency exceeding 45% at 8-dB power backoff with a linear power gain of about 12 dB were obtained across the frequency bandwidth of 4.35-4.85 GHz.
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