A high performance Josephson binary counter implemented in Nb and NbN technology

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A Josephson binary counter with nondestructive readout has been implemented and tested in both niobium and niobium nitride technology. Successful operation of the Nb version has been observed. The design incorporates an additional tapered-edge SiO/sub 2/ level in the Nb processing sequence, which increases interferometer inductance, decreases capacitance, and ensures that geometric resonances are as high in frequency as possible. This level has the added advantage of providing mask compatibility with the NbN process, as this level is skipped in the NbN flow, thereby compensating in part for the larger penetration depth of NbN. The counter cell is designed to be as compact as possible to minimize stray inductance and maximize top count rate and high count rate bias margins. A novel readout SQUID coupling layout that allows low read SQUID inductance and requires no holes in the groundplane is used. Coupling to the adjacent count SQUID is provided by a common control line level metallization, which directs count SQUID flux through the read SQUID loop. Nb versions of the circuit functioned as expected, but low device yield limited the longest chain of functioning stages to five. The NbN circuits did not function due to higher than predicted inductance values.

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Josephson 1-kbit random access memories (RAM's) have been fabricated using Nb multilayer planarization technology with Nb/AlO/sub x//Nb junctions and Mo resistors. The RAM design has been reported previously. The RAM consists of a 32*32-bit nondestructive readout (NDRO) memory cell array and peripheral circuits. The NDRO memory cell consists of a loop storing three flux quanta and two 3-junction interferometer gates. The peripheral circuits consist of decoders with address inverters, drivers, a sense circuit and reset circuits, where resistor-coupled Josephson logic (RCJL) circuits are used as basic circuits. The RAM circuit size is 4.4*4.4 mm/sup 2/, and the memory cell size is 65*65 mu m/sup 2/. About 10000 Nb/AlO/sub x//Nb junctions with 1030-A/cm/sup 2/ critical current density were contained in the RAM. Minimum line and space widths were 3 and 2 mu m, respectively. The Mo resistors had 1.2 approximately 1.3 Omega sheet resistance. About 40 percent of the bits were successfully operated with a +or-18-percent bias margin. A minimum 570-ps access time with 13-mW power dissipation was obtained for the highest peripheral circuit bias conditions. >

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  • Research Article
  • Cite Count Icon 2
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Highly reliable 3He gas detectors are most often used in neutron scattering experiments but have disadvantages such as low count rates and low position resolutions. In this study, a 3He gas detector system called NEUNET-HCR was developed, whose count rate is approximately 10 times that of the current NEUNET system, which was developed for a high position resolution with a low count rate. NEUNET-HCR achieved a maximum count rate of 535 kcps per detector, with a loss of approximately 30%. As the NEUNET-HCR system was developed based on the NEUNET system, various improvements were required to achieve the high count rate. Further, a high count rate was achieved in the NEUNET-HCR system without significantly degrading the position resolution.

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