Abstract

This paper describes nonequilibrium transport phenomenon, practical fabrication process, and potential design of an asymmetric 0.1 /spl mu/m n-MOSFET for the first time. The self-consistent Monte Carlo device simulation coupled with a process simulator reveals the carrier velocity overshoot at the source side of the channel. It is found that the 0.1 /spl mu/m MOSFET with asymmetric channel profile realizes high device performance due to the high carrier velocity.

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