Abstract
AbstractA fully integrated CMOS power amplifier for 5 GHz WLAN applications is implemented using 0.18 μm CMOS technology. An on‐chip transmission‐line transformer is used for output matching and voltage combining. An input balun, interstage matching components, an output transmission‐line transformer, and RF chokes are fully integrated in the amplifier, and thus no external components are required. The power amplifier occupies a total area of 1.7 mm × 1.2 mm. At a 3.3 V supply voltage, the amplifier exhibits a 22.6 dBm output 1 dB compression point, 23.8 dBm saturated output power, and 25 dB power gain. The power added efficiency (PAE) is 21% at maximum, 19% at P1dB. When a 54 Mbps/64 QAM OFDM signal is applied, the PA delivers an average power of 12 dBm at an EVM of −25 dB. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2551–2553, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24683
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