Abstract
A fully integrated 0.25µm CMOS bluetooth class 1 power amplifier is presented. On this chip all inductors and decoupling capacitors are situated on the silicon die. Due to the high level of integration a cheap flip chip assembly method has been used. The chip delivers 138mW (21.4dBm) of output power with a power added efficiency of 25.8%. When the amplifier is tuned to its optimum frequency of 2.1GHz, the output power increases to 184mW and the power added efficiency to 29.5%.
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