Abstract

A laser-induced periodic surface structure (LIPSS) has attracted research interest for its promising potential in micromachining for microelectronics and microelectromechanical systems. A femtosecond laser-induced periodical surface structure was investigated for polished crystalline silicon. The observed structure is similar to the classical ripples that are characterized by long, nearly parallel lines extending over the entire irradiated area on the metal and silicon surface after continuous or pulsed laser irradiation. The spacing of the ripples nearly equals the irradiation wavelength. The depth of these ripples increases nonlinearly with the fluence of irradiation. The orientation of these periodic structures is perpendicular to the vector of the electric field of the laser beam. It seemed that the pattern formed by a femtosecond laser complies well with conventional models. Unlike the patterns formed by a continuous or nanosecond pulsed laser, however, the spacing of the ripple formed by femtosecond pulses is not influenced by the incident angle of the laser beam. The formula used to predict the ripple spacing in the conventional model does not apply to the femtosecond laser induced ripple structure. A plausible explanation to this phenomenon is proposed. The effect of the pulse repetition rate was studied and it was found that a femtosecond laser oscillator generates the same periodic structure as the amplified laser system.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.