Abstract
Self-clamped inductive switching (SCIS) energy capability is a critical parameter of device performance for insulated gate bipolar transistors (IGBTs) used in automotive ignition applications. In this work, the authors propose a monolithic dual-voltage self-clamped IGBT to improve its SCIS energy capability. During an inductive turnoff process, the collector voltage of the proposed device is clamped first at a high level for a short period of time and then at a much lower level until the electromagnetic energy stored in the inductive coil is fully discharged. The concept has been verified and analyzed with extensive numerical device simulation. A monolithic prototype device based the concept has been designed and fabricated with a conventional eight-mask IGBT process. The preliminary experimental result is also reported.
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