Abstract
A dressing technique is used to improve zero range potential (ZRP) model. We consider a Darboux transformation starting with a ZRP, the result of the “dressing” gives a potential with non-zero range that depends on a seed solution parameters. Concepts of the partial waves and partial phases for non-spherical potential are used in order to perform Darboux transformation. The problem of scattering on the regular X n and YX n structures is studied. The results of the low-energy electron–molecule scattering on the dressed ZRPs are illustrated by model calculation for the configuration and parameters of the silane (SiH 4) molecule.
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