Abstract
In this study, a novel solar cell structure is presented. The proposed solar cell consists of copper indium gallium diselenide (CIGS) and copper zinc tin sulfide (CZTS), and three anti-reflector layers of cadmium sulfide, zinc telluride, and zinc oxide. The solar cell performance is investigated, and the results of the designed structure are optimized. The current matching and optimization procedure are performed by adjusting the thickness of the anti-reflector layers, doping concentration, thickness, and bandgap of p-n junction's layers. The short-circuit current density (Jsc) of 25.284 mA/cm2, and the open-circuit voltage (Voc) equal to 2.09 V are achieved. Moreover, the fill factor (FF) is 87.29%, and conversion efficiency equals 46.125%.
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