Abstract
An etchant has been developed which produces etch pits with a well-defined crystallographic structure on {100} gallium phosphide surfaces. Scanning electron microscope (SEM) studies using both the emissive and cathodoluminescent (CL) modes of operation have established that there is a precise 1:1 correlation between etch pits and dark dots seen in the CL micrographs. Since the dark dots in the CL image are produced at the sites of emergent dislocations, it is therefore concluded that the etch pits are dislocation etch pits. The described etchant makes possible a rapid and easy assessment of the degree of crystalline perfection of {100} gallium phosphide epitaxial layers.
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