Abstract
The growth model of gallium arsenide epitaxial layers has been further extended in two ways. First of all, the location of the substrate in experiments in the reactor has been taken into account, and a general relationship has been derived for dependence of the mean effective thickness of the boundary layer on the distance of the substrate from the leading edge and on the substrate size. Secondly, the effect of rate of the chemical heterogeneous reaction has been investigated in addition to the diffusion rate on the resulting growth velocity of epitaxial gallium arsenide layers. A quantitative model comprising the rates of the both partial processes has been formulated. The theoretical relationships obtained in this way have been confronted with experimental results.
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