Abstract
AbstractA fully differential class‐E power amplifier (PA) for wireless body area network applications is presented in this article. A novel dynamic self‐adapting body bias (DSBB) technique is introduced to improve the switch‐on transition and on‐resistance characteristics of MOS transistors. The proposed circuit is fabricated in the TSMC 0.18‐μm RF CMOS process. Measurement results show that the DSBB PA achieves a power‐added efficiency (PAE) of 46.9% with an output power of 13.1 dBm at 900 MHz. Compared to the conventional body‐ground connection PA, PAE and output power are improved more than 6.6% and 4.2 mW, respectively.
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