Abstract
As a commercial photolithography dry film is not possible to achieve a very deep (greater than 30μm) step etch, to fabricate Burnish head and Glide head in slider fabrication section of hard disk drive industry, by dry etching of ceramic Al2O3-TiC material due to the low etch selectivity of substrate to dry film mask. This paper aim to investigate the etch selectivity of substrate to hard metal mask which have high potential that significantly to increase the etch selectivity allowable to produce the 30μm AlTiC etch depth and etch rate of the two type of fluorine-based plasma; SF6 plasma versus CF4 plasma are also explored.
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