Abstract
A one-dimensional model that analyzes the formation of stable, stationary domains in GaAs MESFETs is presented. The method utilizes phase portraits to represent the solutions to the ordinary differential equations that characterize the situation in the channel of the device. Two necessary conditions for the formation of stationary domains are revealed. One of these relates to the gate length and can be used to improve upon the commonly used criterion for domain formation of a doping-density minimum-gate-length product of >10/sup 12/ cm/sup -3/. >
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