Abstract
Phase relations in the GeTe–Te–SnTe region of the Ge–Sn–Te system have been studied with DTA, XRD and EPMA. In addition, a static method based on determination of composition of the solid and liquid phases at equilibrium at a given temperature was applied. The positions of the liquidus isotherms, the iso-mole-fraction lines which show the liquid composition at equilibrium with solid solution Sn 1− x Ge x Te of given x, and the two-phase crystallization lines for Sn 1− x Ge x Te + Te were determined. Finally, the conditions of Sn 1− x Ge x Te crystal growth from the melt by means of normal freezing and vapour–liquid–solid (VLS) technique yielding crystals with uniform distribution of GeTe mole fraction are discussed.
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