Abstract
A new technique, the spectral response of the steady-state photoconductance, is proposed for solar cell characterisation in research and development. The emphasis of this paper is on the evaluation of the carrier collection efficiency of the emitter region based on a simple, two-wavelength approach. We show that in addition to the well-established determination of the wafer recombination properties that results from a long-wavelength photoconductance measurement, detailed emitter quantum-efficiency information can be obtained by performing a second measurement with short-wavelength light. The method is experimentally demonstrated with silicon solar cell precursors having emitters with markedly different levels of surface and bulk recombination losses. The main advantages of the spectral photoconductance technique are that it is fast, contactless, and can be used immediately after junction formation before metallisation; these properties make it very appropriate for routine monitoring of the emitter region, including in-line process control.
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