Abstract
TTRAM can provide high speed, low power and high density with CMOS compatible SOI process. However it is difficult to handle as the unified memory required for advanced SoC because it needs the simple control sensing operation for memory compiler, higher cell efficiency, and lower voltage operation for dynamic frequency and voltage control. The enhanced TTRAM (ET2RAM) can solve these issues and the key technologies provide 0.5V memory operation, compact and higher sensitivity sense amplifier, and programmable multi-bank array
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