Abstract
In the present study, the characteristic dependence of the Hall mobility upon the temperature of a degenerate ensemble of two-dimensional electrons in a well of heterostructure were calculated in broader detail, for the ohmic field region, at low temperatures. Apart from the electronic interactions with the remote ionized impurities and the surface roughness, the study also duly considered some factors that are often ignored for mathematical simplicity. These include the inelasticity of the electron–phonon collisions and the true phonon distribution. The results thus obtained for heterostructures such as AlGaAs/GaAs, AlGaN/GaN, and AlInSb/InSb show that the consideration of the above details significantly changes the overall characteristics, and makes them agree quite well with the experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
