Abstract
The non-uniform turned-on and low holding-Voltage (V h) issues are seriously impacted the reliability abilities of an n-channel lateral-diffused power MOSFET (nLDMOS). Therefore, basing on the drain Field-Oxide Device (FOD) structure of an nLDMOS and changing the thin-Oxide Definition (OD) topology for contacts located in the middle region of drain-side will be investigated in this study. The OD structure will renew as some dotted-OD manners. Experimental results show that the dotted-OD layout has a higher Electrostatic Discharge (ESD) capability than that of the FOD structure and the layout type of dotted-OD will affect the ESD capability of an HV component. A uniformly distributed type of dotted-OD will have a highest I t2 value, the I t2 value is increased about 12% as compared with the Ref. traditional nLDMOS. And, the V h value will increase with the contacts number increasing within the dotted-OD, which is increased about 28.2% of a dotOD46 device as compared with the traditional nLDMOS. Furthermore, as adding an FODs structure combined with a uniform dotted-OD structure in the drain side will be haven a high ESD capability (about 5.9% increasing) and high LU immunity (25.8% increasing) compared with the traditional nLDMOS DUT. Therefore, it is good both for ESD and Latch-Up (LU) reliability considerations.
Highlights
It is well known that an n-channel Lateral-Diffused power MOSFET has been commonly used as the output driver or Electrostatic Discharge (ESD) device in a high-voltage circuit for its low on-resistance and fully compatible with the existing CMOS technologies
An n-channel Lateral-Diffused power MOSFET (nLDMOS) has several serious shortcomings, including a multi-finger type device can’t completely turn on which will result in the Electrostatic Discharge (ESD) capability per unit length is very weak and the holding Voltage (Vh) value is very low as compared with the supply voltage VCCmax
It can be found that an Field-Oxide Device (FOD) structure combined with a dotted-Oxide Definition (OD) structure in the drain-side can result in Vh and It2 values increasing
Summary
It is well known that an n-channel Lateral-Diffused power MOSFET (nLDMOS) has been commonly used as the output driver or ESD device in a high-voltage circuit for its low on-resistance and fully compatible with the existing CMOS technologies. If an HV nLDMOS is added with an FOD and OD engineering in the drain side, will the ESD reliability be enhanced? Changing the contacts layout of an OD region in the drain-side makes the OD layout renew as the dotted-OD types as shown in Fig. 1 to 4.
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