Abstract
A photoluminescence (PL) study of oxygen-rich (CZ) silicon subject to beryllium ion implantation and subsequent annealing is reported. A characteristic bound exciton luminescence spectrum is observed with a narrow zero-phonon line at 1137.98(5) meV, denoted , accompanied by a vibrational sideband extending for more than 200 meV from the zero-phonon line and containing lattice- and defect-related vibrational modes. The spectrum is not observed in oxygen-lean, float zone (FZ) silicon except where beryllium and oxygen are co-implanted. The response of the luminescence system to external perturbations such as temperature, uniaxial stress and magnetic fields are reported. The defect structure is found to have rhombic I symmetry and the absence of any splitting in a magnetic field indicates that the line is a magnetic singlet. The data are interpreted in the context of a pseudodonor model.
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