Abstract
AbstractIn this Letter a new physical model for metal–insulator–metal CMOS capacitors is presented. In the model the parameters of the circuit are derived from the physical structural details. Physical behaviors due to metal skin effect and inductance have been considered. The model has been confirmed by 3D EM simulator and design rules proposed. The model presented is scalable with capacitor geometry, allowing designers to predict and optimize quality factor. The approach has been verified for MIM CMOS capacitors. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 34: 177–181, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10409
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