Abstract
Photocatalytic hydrogen production based on semiconductor photocatalysts has been considered as one of the most promising strategies to resolve the global energy shortage. Graphitic carbon nitride (g-C3N4) has been a star visible-light photocatalyst in this field due to its various advantages. However, pristine g-C3N4 usually exhibits limited activity. Herein, to enhance the performance of g-C3N4, alkali metal ion (Li+, Na+, or K+)-doped g-C3N4 are prepared via facile high-temperature treatment. The prepared samples are characterized and analyzed using the technique of XRD, ICP-AES, SEM, UV-vis DRS, BET, XPS, PL, TRPL, photoelectrochemical measurements, photocatalytic tests, etc. The resultant doped photocatalysts show enhanced visible-light photocatalytic activities for hydrogen production, benefiting from the increased specific surface areas (which provide more active sites), decreased band gaps for extended visible-light absorption,land improved electronic structures for efficient charge transfer. In particular, because of the optimal tuning of both microstructure and electronic structure, the Na-doped g-C3N4 shows the most effective utilization of photogenerated electrons during the water reduction process. As a result, the highest photocatalytic performance is achieved over the Na-doped g-C3N4 photocatalyst (18.7 μmol/h), 3.7 times that of pristine g-C3N4 (5.0 μmol/h). This work gives a systematic study for the understanding of doping effect of alkali metals in semiconductor photocatalysis.
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