Abstract
MOCVD growth of InxGa1−xAs from trimethylgallium (TMG), triethylgallium (TEG), trimethylindium (TMI) and arsine was studied over a wide range of growth conditions. It was found that the InxGa1−xAs strain with respect to InP is strongly influenced by the arsine concentration when grown with TEG and TMI. In contrast the InxGa1−xAs strain was independent of arsine concentration when grown with TMG and TMI. It was also observed that the growth rate of InxGa1−xAs is higher for TMG than for TEG with the same TMI and arsine flow. In addition an interaction between TEG and dimethylzinc (DMZ) was also observed.
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