Abstract
A comparison of the GaAs MESFET and AlGaAs/GaAs single heterojunction bipolar transistor (HBT) for CW microwave power amplification has been carried out by theoretical analysis and simulation. The thermal resistance and therefore the device operating temperature is significantly higher for the HBT. If the device area is increased to allow for operation of the HBT at similar power density to the MESFET, then the input impedance (common emitter) of the HBT will be well below that of the MESFET, making input matching much more difficult to achieve.
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