A Comparison of Analogous Semiconductor and Gaseous Electronics Devices

Abstract

Publisher Summary This chapter presents a comparison of analogous semiconductor and gaseous electronics devices. The purpose is to review the fundamental theory and actual performance of those semiconductor devices that are most analogous to gas tubes. This is done by making comparisons of gaseous and solid-state conduction processes and of the electrical ratings of existing devices. In addition, maximum electrical ratings are predicted for the semiconductor devices. These predictions are theoretical and are based on known physical principles, on characteristics of semiconducting materials, and to some extent on present techniques of device preparation.. In the chapter, the fundamentals of conduction processes in semiconductors and gases are discussed and compared. It reviews the operating principles of junction devices. In the chapter, semiconductor devices that are either commercially available or have been reported in the literature are compared to equivalent gas tubes. A discussion of the theoretical limits to voltage, current density, and power dissipation in junction devices are given in the chapter. Throughout the chapter, the discussion is limited to germanium and silicon devices.