Abstract
We present a comparison of material quality and device performance of metamorphic InGaAs/InP heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy (MBE) on GaAs substrates with two different types of buffer layers (direct InP and graded InAlP buffers). The results show that the active layer of InP-MHBT has more than one order of magnitude more defects than that of the InAlP-MHBT. The InAlP-MHBTs show excellent direct current (DC) performance. Low DC current gain and a high base junction ideality factor from the InP-MHBT are possibly due to a large number of electrically active dislocations in the HBT active layers, which is consistent with a large number of defects observed by cross-sectional transmission electron microscopy (TEM) and rough surface morphology observed by atomic force microscopy (AFM).
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