Abstract
Unidirectional 〈010〉 TGS single crystal of diameter 35mm and length 80mm was grown by Sankaranarayanan–Ramasamy (SR) method. Nearly two times higher d33 value has been obtained for the SR grown TGS crystal compared to conventional grown TGS. The etch pit density of SEST and SR method grown TGS crystal is 2.1×102cm−2 and 1.5×102cm−2 respectively. The values of hardness were found to be 152kg/mm2 for SR grown TGS and 108kg/mm2 for SEST grown TGS crystal. The average laser damage threshold obtained on the SEST grown TGS crystal was 29mJ/cm2 whereas a high damage threshold of 39mJ/cm2 was obtained for the SR grown crystal. The SR method grown TGS has 5% higher transmittance as against conventional method grown crystal. Dielectric study showed higher dielectric permittivity and lower dielectric loss in SR grown TGS crystal.
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